| PART |
Description |
Maker |
| HMT451S6MMP8C-G7 HMT451S6MMP8C-S6 HMT451S6MMR8C-G7 |
204pin DDR3 SDRAM SODIMM
512M X 64 DDR DRAM MODULE, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
| HMT112S6TFR8C-G7 HMT112S6TFR8C-H9 HMT125S6TFR8C-G7 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| M471B5273DH0 |
204pin Unbuffered SODIMM
|
Samsung
|
| HYS72D32300GBR-6-C HYS72D64320GBR-6-C HYS72D128320 |
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 2-bank; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC3200 1-bank; Available 3Q04
DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based; Available 3Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 2-bank; Available 2Q04
DDR SDRAM Modules - 512 MB (64Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 256 MB (32Mx72) PC2700 1-bank; Available 2Q04
DDR SDRAM Modules - 1 GB (128Mx72) PC2700 2-bank; Available 2Q04
184-Pin Registered Double Data Rate SDRAM Module
|
INFINEON[Infineon Technologies AG]
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| PFM-CVSREV.A PFM-CVS-A 1702002010 1701010150 17090 |
204-pin DDR3 800/1066 MHz SODIMM x 1, Up to 2 GB
CRT, 18-bit Single Channel LVDS LCD
|
AAEON Technology
|
| Z2647 Z2633 Z2617 Z2615 Z2630 Z2618 Z2620 Z2645 Z2 |
128MB DDR SDRAM SODIMM
TRANSFORMER 18VA 2X 18V
TRANSFORMER 10VA 2X 12V
TRANSFORMER 10VA 2X 6V
TRANSFORMER 18VA 2X 9V
TRANSFORMER 10VA 2X 15V
64MB SDRAM SODIMM
TRANSFORMER 30VA 2X 15V
|
|
| KMM466S823CT3 |
144pin SDRAM SODIMM
|
Samsung Semiconductor
|
| HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword × 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M × 8 components) PC133/100 SDRAM
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512 MB的无缓冲内存的SODIMM 64 Mword4位，133/100 MHz内存总线银模块（162米部分）PC133/100 SDRAM内存
x64 SDRAM Module
|
Elpida Memory, Inc.
|
| P13B16212A P13B16212V M464S3254DTS PC133 M464S3254 |
Protective Eyeglasses RoHS Compliant: NA
Personal protection, Spectacles; RoHS Compliant: NA
Electrically Conductive Floor Mat 1/8 inch x 4 feet x 8 feet RoHS Compliant: NA
32Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh,3.3V Synchronous DRAMs with SPD
32Mx64 SDRAM SODIMM based on 16Mx16 4Banks 8K Refresh3.3V Synchronous DRAMs with SPD
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KMM464S424CT1 |
PC100 144pin SDRAM SODIMM
|
Samsung Semiconductor
|
